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The Critical Temperature of Superconducting Aluminum Films
- Autores: Arutyunov K.Y.1,2, Sedov E.A.1,3, Zavialov V.V.1,2, Stavrinidis A.4,5, Stavrinidis G.4,5, Chatzopoulos Z.4,5, Adikimenakis A.4,5, Konstantinidis G.4,5, Florini N.6, Chatzopoulou P.7, Kehagias T.7, Dimitrakopulos G.P.7, Komninou F.7
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Afiliações:
- National Research University Higher School of Economics
- Kapitsa Institute for Physical Problems, Russian Academy of Sciences
- Lebedev Physical Institute, Russian Academy of Sciences
- Institute of Electronic Structures and Lasers, Hellenic Foundation for Research and Technology – Hellas (FORTH)
- Department of Physics, University of Crete
- Department of Physics, Aristotle University of Thessaloniki, Thessaloniki
- Department of Physics, Aristotle University of Thessaloniki
- Edição: Volume 124, Nº 1 (2023)
- Páginas: 56-60
- Seção: ЭЛЕКТРИЧЕСКИЕ И МАГНИТНЫЕ СВОЙСТВА
- URL: https://clinpractice.ru/0015-3230/article/view/662775
- DOI: https://doi.org/10.31857/S001532302260157X
- EDN: https://elibrary.ru/KRKHMQ
- ID: 662775
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Resumo
The R(T) dependences of thin superconducting aluminum films deposited on leucosapphire and gallium arsenide substrates by electron beam sputtering and molecular beam epitaxy have been experimen-tally studied. Regardless of morphology, a noticeable increase in the critical temperature of the supercon-ducting transition with a decrease in the film thickness is found. The effect is interpreted as a manifestation of the quantum size effect.
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Sobre autores
K. Arutyunov
National Research University Higher School of Economics; Kapitsa Institute for Physical Problems, Russian Academy of Sciences
Email: karutyunov@hse.ru
Moscow, 101000 Russia; Moscow, 119334 Russia
E. Sedov
National Research University Higher School of Economics; Lebedev Physical Institute, Russian Academy of Sciences
Email: karutyunov@hse.ru
Moscow, 101000 Russia; Moscow, 119991 Russia
V. Zavialov
National Research University Higher School of Economics; Kapitsa Institute for Physical Problems, Russian Academy of Sciences
Email: karutyunov@hse.ru
Moscow, 101000 Russia; Moscow, 119334 Russia
A. Stavrinidis
Institute of Electronic Structures and Lasers, Hellenic Foundation for Research and Technology – Hellas (FORTH); Department of Physics, University of Crete
Email: karutyunov@hse.ru
Heraklion, GR-700 13 Greece; Heraklion, GR-700 13 Greece
G. Stavrinidis
Institute of Electronic Structures and Lasers, Hellenic Foundation for Research and Technology – Hellas (FORTH); Department of Physics, University of Crete
Email: karutyunov@hse.ru
Heraklion, GR-700 13 Greece; Heraklion, GR-700 13 Greece
Z. Chatzopoulos
Institute of Electronic Structures and Lasers, Hellenic Foundation for Research and Technology – Hellas (FORTH); Department of Physics, University of Crete
Email: karutyunov@hse.ru
Heraklion, GR-700 13 Greece; Heraklion, GR-700 13 Greece
A. Adikimenakis
Institute of Electronic Structures and Lasers, Hellenic Foundation for Research and Technology – Hellas (FORTH); Department of Physics, University of Crete
Email: karutyunov@hse.ru
Heraklion, GR-700 13 Greece; Heraklion, GR-700 13 Greece
G. Konstantinidis
Institute of Electronic Structures and Lasers, Hellenic Foundation for Research and Technology – Hellas (FORTH); Department of Physics, University of Crete
Email: karutyunov@hse.ru
Heraklion, GR-700 13 Greece; Heraklion, GR-700 13 Greece
N. Florini
Department of Physics, Aristotle University of Thessaloniki, Thessaloniki
Email: karutyunov@hse.ru
Thessaloniki, GR-541 24 Greece
P. Chatzopoulou
Department of Physics, Aristotle University of Thessaloniki
Email: karutyunov@hse.ru
Thessaloniki, GR-541 24 Greece
T. Kehagias
Department of Physics, Aristotle University of Thessaloniki
Email: karutyunov@hse.ru
Thessaloniki, GR-541 24 Greece
G. Dimitrakopulos
Department of Physics, Aristotle University of Thessaloniki
Email: karutyunov@hse.ru
Thessaloniki, GR-541 24 Greece
F. Komninou
Department of Physics, Aristotle University of Thessaloniki
Autor responsável pela correspondência
Email: karutyunov@hse.ru
Thessaloniki, GR-541 24 Greece
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