Informaçao sobre o Autor

Ефремов, А.

Edição	Seção	Título	Arquivo
Volume 53, Nº 1 (2024)	TECHNOLOGIES	Parameters and Composition of Plasma in a Mixture of CF₄ + H₂ + Ar: Effect of the CF₄/H₂ Ratio
Volume 52, Nº 5 (2023)	ПЛАЗМЕННЫЕ ТЕХНОЛОГИИ	The Influence of Small F2, H2, and HF Additives on the Concentration of Active Particles in Tetrafluoromethane Plasma
Volume 52, Nº 4 (2023)	ПЛАЗМЕННЫЕ ТЕХНОЛОГИИ	Concentration of Fluorine Atoms and Kinetics of Reactive-Ion Etching of Silicon in CF4 + O2, CHF3 + O2, and C4F8 + O2 Mixtures
Volume 52, Nº 2 (2023)	TECHNOLOGIES	Plasma Parameters and Kinetics of Reactive Ion Etching of SiO2 and Si3N4 in an HBr/Cl2/Ar Mixture
Volume 52, Nº 1 (2023)	DIAGNOSTICS	Controlling Silicon Etching Parameters in RF CHF3 Plasma by Optical Emission Spectroscopy
Volume 52, Nº 1 (2023)	TECHNOLOGIES	Параметры газовой фазы и кинетика реактивно-ионного травления SiO₂ в плазме CF₄/C₄F₈/Ar/He
Volume 53, Nº 6 (2024)	DIAGNOSTICS	Gas Phase Composition and Fluorine Atom Kinetics in SF₆ Plasma
Volume 53, Nº 6 (2024)	TECHNOLOGIES	Plasma Parameters and Si/SiO₂ Etching Kinetics in Mixtures of Fluorocarbon Gases with Argon and Helium