Interlayer junction for EBG waveguide integrated with a power divider into two channels
- Авторлар: Bankov S.E.1, Kalinichev V.I.1
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Мекемелер:
- Institute of Radio Engineering and Electronics named after V.A. Kotelnikov RAS
- Шығарылым: Том 69, № 5 (2024)
- Беттер: 414-421
- Бөлім: ЭЛЕКТРОДИНАМИКА И РАСПРОСТРАНЕНИЕ РАДИОВОЛН
- URL: https://clinpractice.ru/0033-8494/article/view/650671
- DOI: https://doi.org/10.31857/S0033849424050023
- EDN: https://elibrary.ru/ILNKXQ
- ID: 650671
Дәйексөз келтіру
Аннотация
An interlayer junction for three-row EBG waveguides integrated with a two-channel power divider was studied. It is shown that without additional matching such transitions are relatively narrow-band in terms of reflection coefficient in the frequency band 8…12 GHz. To expand the matching band, a modified transition with additional matching rods in both waveguide channels on the power divider layer is proposed. Using numerical analysis, it was found that due to this in the frequency band under study, it is possible to obtain a symmetrical matching curve with two well separated minima and with a matching level no worse than –20 dB in the central part of the range. It is shown that in the structure with matching rods, the operating frequency band by reflection coefficient is significantly expanded in comparison with the original structure.
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Авторлар туралы
S. Bankov
Institute of Radio Engineering and Electronics named after V.A. Kotelnikov RAS
Хат алмасуға жауапты Автор.
Email: sbankov@yandex.ru
Ресей, St. Mokhovaya, 11, building 7, Moscow, 125009
V. Kalinichev
Institute of Radio Engineering and Electronics named after V.A. Kotelnikov RAS
Email: sbankov@yandex.ru
Ресей, St. Mokhovaya, 11, building 7, Moscow, 125009
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