Enviar artigo por via de e-mail Hydrogen Plasma under Conditions of Electron-Cyclotron Resonance in Microelectronics Technology
- Autores: Polushkin E.A.1,2, Nefed’ev S.V.1, Koval’chuk A.V.2, Soltanovich O.A.2, Shapoval S.Y.2
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Afiliações:
- JSC Molecular Electronics Research Institute
- Institution of Science, Institute of Problems of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences
- Edição: Volume 52, Nº 3 (2023)
- Páginas: 236-239
- Seção: ТЕХНОЛОГИИ
- URL: https://clinpractice.ru/0544-1269/article/view/655282
- DOI: https://doi.org/10.31857/S0544126923700321
- EDN: https://elibrary.ru/UECTWT
- ID: 655282
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Resumo
This paper presents the results of hydrogen electron-cyclotron resonance (ECR) plasma in micro-electronics technology. Its effect on the radiation resistance of the IC and on the quality of the ohmic contact during the formation of UBM metallization is demonstrated. The devices obtained with the use of plasma ECR and without it are analyzed.
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Sobre autores
E. Polushkin
JSC Molecular Electronics Research Institute; Institution of Science, Institute of Problems of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences
Email: epolushkin@niime.ru
Moscow, Zelenograd, 124460 Russia; Chernogolovka, Moscow oblast, 142432 Russia
S. Nefed’ev
JSC Molecular Electronics Research Institute
Email: epolushkin@niime.ru
Moscow, Zelenograd, 124460 Russia
A. Koval’chuk
Institution of Science, Institute of Problems of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences
Email: epolushkin@niime.ru
Chernogolovka, Moscow oblast, 142432 Russia
O. Soltanovich
Institution of Science, Institute of Problems of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences
Email: epolushkin@niime.ru
Chernogolovka, Moscow oblast, 142432 Russia
S. Shapoval
Institution of Science, Institute of Problems of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences
Autor responsável pela correspondência
Email: epolushkin@niime.ru
Chernogolovka, Moscow oblast, 142432 Russia
Bibliografia
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- Influence of diffusion hydrogen on the radiation hardness of silicon devices / E.A. Polushkin, A.V. Kovalchuk, O.A. Soltanovich [et al.] // Proceedings of SPIE V. 12157, International Conference on Micro- and Nano-Electronics 2021, 1215711 (2022). EDN MBGAEWhttps://doi.org/10.1117/12.2624184
- Гольцов В.А. Фундаментальные основы водородной обработки материалов / В.А. Гольцов // Письма в международный научный журнал “Альтернативная энергетика и экология”. 2014. № 2(2). С. 31–33. EDN RYPZWV.
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